型号:

NTB5426NT4G

RoHS:无铅 / 符合
制造商:ON Semiconductor描述:MOSFET N-CH 60V 120A D2PAK
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
NTB5426NT4G PDF
产品变化通告 Reactivation Notice 08/Apr/2011
Product Obsolescence 21/Jan/2010
标准包装 800
系列 -
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 60V
电流 - 连续漏极(Id) @ 25° C 120A
开态Rds(最大)@ Id, Vgs @ 25° C 6 毫欧 @ 60A,10V
Id 时的 Vgs(th)(最大) 4V @ 250µA
闸电荷(Qg) @ Vgs 170nC @ 10V
输入电容 (Ciss) @ Vds 5800pF @ 25V
功率 - 最大 215W
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 D2PAK
包装 带卷 (TR)
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